Determine gate G: Set the multimeter to the R × 1k position, connect any negative electrode of the multimeter to one electrode, and sequentially touch the other two electrodes with the other probe to measure their resistance.
Categories：Product knowledge Date：2024-11-16 Hits：261 View »
YFWG290N10TL TOLL YuFeng Microelectronics, original manufacturer of diodes, high-voltage diodes, surface mount diodes, fast recovery diodes, Schottky diodes, low voltage drop Schottky diodes, field-effect transistors, MOSFETs, MOSFET manufacturers, MOSFET production, fast recovery bridge stack, inverter rectifier bridge, rectifier bridge, ESD electrostatic tube, TSS solid-state discharge tube, TVS diode - YuFeng Microelectronics
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Active and passive components
Categories：Product knowledge Date：2024-11-16 Hits：255 View »
The main reason is that the semiconductor types of each pole are different. The E, B, and C poles of PNP transistors are P-type, N-type, and P-type semiconductors, respectively, while NPN transistors are exactly the opposite.
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The reasons and solutions for MOS transistor breakdown are as follows
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The reasons and solutions for MOS transistor breakdown are as follows
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In actual projects, we mostly use enhanced models.
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The working principle of tunneling field-effect transistor (TFET) is interband tunneling, and its S can break through the limit of 60mV/decade. Moreover, the Ioff of TFET is very low, so the operating voltage of TFET can be further reduced.
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1. Identify pin polarity; 2. Check the quality of performance
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ESD1006B7V0D DFN1006 YuFeng Microelectronics, original manufacturer of diodes, high-voltage diodes, surface mount diodes, fast recovery diodes, Schottky diodes, low voltage drop Schottky diodes, field-effect transistors, MOSFETs, MOSFET manufacturers, MOSFET production, fast recovery bridge stack, inverter rectifier bridge, rectifier bridge, ESD electrostatic tube, TSS solid-state discharge tube, TVS diode - YuFeng Microelectronics
Categories：Product Subsitution Date：2024-11-15 Hits：246 View »
